スポンサーリンク
Industrial Technol. Res. Inst. Hsinchu Twn | 論文
- InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts
- Liquid Phase Epitaxy Growth and Properties of GaInAsSb/AlGaAsSb/GaSb Heterostructures
- Time Domain Study on Cavity Ring-Down Signals from a Fabry-Perot Cavity under Pulsed Laser Excitations
- Threshold Voltage Instability in nMOSFETs with HfSiO/SiO_2 High-k Gate Stacks
- Annealing Effect on Boron High-Energy-Ion-Implantation-Induced Defects in Si
- AlGaN/GaN Modulation-Doped Field-Effect Transistors with An Mg-doped Carrier Confinement Layer
- Improvement on Fluorine Effect under High Field Stress in Tungsten-Polycide Gated Metal-Oxide-Semiconductor Field-Effect Transistor with Oxynitride and/or Reoxidized-Oxynitride Gate Dielectric
- Effects of Substrate Misorientation and Zn Doping Characteristics on the Performance of AlGaInP Visible Light-Emitting Diodes
- Metalorganic Vapor Phase Epitaxy Growth and Characterization of (Al_xGa_)_In_P/Ga_In_P (x=0.4, 0.7 and 1.0) Quantum Welts on 15°-Off-(100) GaAs Substrates at High Growth Rate
- Photoluminescence Study of Heavily Te-doped GaAs Grown by Liquid-Phase Epitaxy
- Growth and Characterization of InGaP Yellow-Green Light-Emitting Diodes by Liquid-Phase Epitaxy
- Dynamic Testing of Phase Change Disk with Varied Dielectric Layer Thickness
- Distillation in a Rotating Packed Bed
- Structural and Optical Studies of ZnCdSe/ZnSe/ZnMgSSe Separate Confinement Heterostructures with Different Buffer Layers
- Anomalous Current-Voltage Characteristics and Threshold Voltage Shift in Implanted-Polysilicon-Gated Complementary Metal-Oxide-Semiconductor Field-Effect Transistors with/without Titanium-Polycide Technology
- Novel Amorphous-Crystallime Silicon Heterojunction Switching Devices with Bidirectional Switching Characteristics
- Amorphous Silicon Double-Injection Device with Gate-Controllable N-Type Negative Resistance
- Oxygen and Nitrogen Co-Doped GeSbTe Thin Films for Phase-Change Optical Recording
- A High Contrast and High Brightness Reflective LCD with an Internal Diffusive Reflector (第5回日韓台中情報ディスプレイ合同研究会(ASID '99)) -- (LCD Technology-1)
- A High Contrast and High Brightness Reflective LCD with an Internal Diffusive Reflector