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Hitachi Kokusai Electric Inc. | 論文
- Terminal Migration Model in which Cell Dwell Time is Defined by Different Probability Distributions in Different Cells(Special Section on Multi-dimensional Mobile Information Networks)
- High pressure water vapor annealing for improving HfSiO dielectrics properties
- Design and Performance of a Millimeter-Wave Video-Transmission System Using 60-GHz Band for Indoor BS Signals Transmission(Special Issue on Millimeter-Wave Circuit and Fabrication Technologies Opening up the 21st Century)
- Ultra-High-Sensitivity New Super-HARP Pickup Tube and Its Camera(Recent Progress in Photon Detection Technology)
- Self-Similarity in Cell Dwell Time Caused by Terminal Motion and Its Effects on Teletraffic of Cellular Communication Networks(Special Section on Multi-dimensional Mobile Information Networks)
- Vehicle Motion in Large and Small Cities and Teletraffic Characterization in Cellular Communication Systems(Special Issue on Mobile Multimedia Communications)
- Teletraffic Characteristics of Cellular Communication for Different Types of Vehicle Motion(Special lssue on lnnovative Mobile Communication Technologies at the Dawn of the 21^ Century)
- Diffusion Model for Multimedia and Mobile Traffic Based on Population Process for Active Users in a Micro-Cell (Special Issue on Personal, Indoor and Mobile Radio Communications)
- Invited paper : Design and fabrication of compact superconducting filters and antennas using high quality YBCO films
- A16-086 ANALYSIS OF GAS FLOWS ON SILICON-WAFER SURFACE IN LOW PRESSURE CVD REACTOR
- TED-AJ03-372 ANALYSIS OF THE REACTANT GAS FLOW AND TEMPERATURE DISTRIBUTION ON SILICON WAFER SURFACES ARRANGED IN A ROW IN HEATING FURNACE
- TED-AJ03-371 HEATING CHARACTERISTICS OF SILICON WAFERS ARRANGED IN A ROW IN A HEATING FURNACE
- Millimeter-Wave Vertically-Connected Wireless Link for Satellite Broadcasting in an Apartment Building(Recent Fundamental Technologies for Broadband Satellite Communications)
- Slip Generation in Si Wafers due to Friction-Induced Stress and Its Suppression Technique
- Hafnium Oxide Film Etching Using Hydrogen Chloride Gas
- Ultra-high-sensitivity New Super-HARP Pickup Tube and Its Camera
- Hole Mobility Enhancement Caused by Gate-Induced Vertical Strain in Gate-First Full-Metal High-$k$ P-Channel Field Effect Transistors Using Ion-Beam W
- Improving high-κ gate dielectrics properties by high pressure water vapor annealing