TED-AJ03-372 ANALYSIS OF THE REACTANT GAS FLOW AND TEMPERATURE DISTRIBUTION ON SILICON WAFER SURFACES ARRANGED IN A ROW IN HEATING FURNACE
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概要
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In the manufacturing process of silicon semiconductor devices using vertical heating furnaces, large numbers of wafers are arranged in stacks, and a thin film is deposited on the silicon wafer by reactant gases at heating at 500℃ to 1000℃. Flow control of the reactant gas across the wafers to enable the deposition of thinner films in addition to temperature control are very important. The research reported here, clarified flow velocity and temperature of the gas on the wafer surface by numerical simulation and measurements on the wafer were carried out by a PIV method with gas flow in a trial reactor. Schematic drawings of the simulation model are shown in Figure A-1. The analysis was three-dimensional axisymmetric on a pair of wafer surfaces. Low pressure CVD (Chemical Vapor Deposition) was assumed, and the pressure in the reactor was set to 200Pa. The calculations [figure] were carried out on some cases with different positions and injection directions of the nozzle, etc. In Figure A-2,case A has the nozzle in contact with the reaction tube wall surface, and there is a large vortex right after the nozzle exit. Since the gas is introduced in a low pressure field, the gas introduced at the atmospheric pressure diffuses widely from the nozzle exit. The thin film deposition can be assumed to be affected by this large velocity gradient and vortex. In case B a convex division is attached on both sides with the nozzle so that it will not produce a large vortex at the nozzle exit vicinity. It can be observed that the gas flow is uniform all the way to the exit slit. To achieve uniform gas flow in the reaction tube, the placement of two facing the nozzles with a convex division is effective. It is also clarified the temperature distribution of the reactant gas on the wafer surface.[figure]
- 一般社団法人日本機械学会の論文
著者
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Saito Naoko
Division Of Mechanical Science Hokkaido University
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CHIKAHISA Takemi
Div. of Mech. Sci., Hokkaido Univ.
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HISHINUMA Yukio
Div. of Mech. Sci., Hokkaido Univ.
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YAMAGUCHI Takatomo
Hitachi Kokusai Electric INC.
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KIKUTA Kazushige
Division of Mechanical Science, Hokkaido University
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SAITO Naoko
Div. of Mech. Sci., Hokkaido Univ.
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MIYATA Toshimitsu
Hitachi Kokusai Electric INC.
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