TED-AJ03-371 HEATING CHARACTERISTICS OF SILICON WAFERS ARRANGED IN A ROW IN A HEATING FURNACE

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In the manufacture of silicon semiconductor devices, large numbers of wafers are stacked in vertical furnaces, and thin films are formed on the silicon wafer by heating at 500 to 1000℃. Temperature control of the wafer is very important to enable films thinner in high density devices. It is known that the radiation characteristics of the silicon wafer change with the temperature, but the influence of the radiation characteristics on temperature change of the wafer stacked in the furnace is not clarified. The purposes of this research are investigating the details of temperature change of the wafer stacked in the furnace, and clarifying the characteristic by the numerical simulations. A vertical sectional view of the furnace used in the experiments is shown in Fig. A-1. A maximum of the 50 wafers stacked on a quartz boat is inserted in the inner tube. The heater is divided into five zones in the perpendicular [figure] direction, and temperature control is possible in each zone. Figure A-2 shows the transitional changes in the temperature of the wafers when 50 wafers are stacked with an interval of 15mm, heated from room temperature to 800℃. Here, the wafers with the thin oxidation film are used in this experiment. The wafer temperature rises very rapidly after the temperature of wafers exceeds 350℃ because emissivity of the wafers increase from about 0.35 to 0.85 when temperatures increase from 300 to 500℃. The heating from 600 to 800℃, the wafer temperature rises almost linearly. The reason is that the emissivity change of silicon wafers is small in this temperature range. In this research, we clarified the affects of the radiation characteristics of the wafers stacked in the furnace on the temperature change by experiments and numerical simulations.[figure]
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TED-AJ03-371 HEATING CHARACTERISTICS OF SILICON WAFERS ARRANGED IN A ROW IN A HEATING FURNACE

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