A16-086 ANALYSIS OF GAS FLOWS ON SILICON-WAFER SURFACE IN LOW PRESSURE CVD REACTOR
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概要
- 論文の詳細を見る
The paper investigates the flow characteristics of reactant gas on the silicon wafers in a vertical LPCVD (Low-Pressure Chemical Vapor Deposition) reactor by the flow visualization and the numerical simulation. The observation was made in a model reactor in a very low-pressure condition, which makes the observation quite difficult because of tracer seeding. The CFD code FLUENT was used for the numerical simulation. The results of the visualization and the numerical simulation showed that the gas flow was quite viscous and it received large resistance force from the wafers and the supporting lodes. Regardless of the low-pressure condition, the flow is simulated well by the CFD code based on Navier-Stokes equation, and the most of the field appeared to be laminar. For the establishment of the uniform flow pattern, twin counter-flow nozzles were better than a single nozzle. The flow was free from stagnant flow or re-circulating flow so that it appeared to be suited for the prevention of particle formations.
- 一般社団法人日本機械学会の論文
- 2003-11-30
著者
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Saito Naoko
Division Of Mechanical Science Hokkaido University
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Saito Naoko
Division Of Blood Transfusion Tohoku University Hospital
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Sasaki Takafumi
Div. Of Mech. Sci. Hokkaido Univ.
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KIKUTA Kazushige
Div. of Mech. Sci., Hokkaido Univ.
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CHIKAHISA Takemi
Div. of Mech. Sci., Hokkaido Univ.
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HISHINUMA Yukio
Div. of Mech. Sci., Hokkaido Univ.
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MORIMITSU Kazuhiro
Hitachi Kokusai Electric INC.
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YAMAGUCHI Takatomo
Hitachi Kokusai Electric INC.
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