Slip Generation in Si Wafers due to Friction-Induced Stress and Its Suppression Technique

概要

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Slip-free 300 mm wafers annealed at temperatures higher than 1000°C have been investigated. It has been found that friction-related stress must be introduced to explain slip generation experimentally in addition to gravitationally induced bending stress, compressive stress and thermally induced stress. Slip-free 300 mm wafers annealed at 1350°C are obtained by appropriately controlling the surface roughness of the supporting disk.
INSTITUTE OF PURE AND APPLIED PHYSICSの論文
2005-10-10