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High-technology Research Center And Faculty Of Engineering Kansai University | 論文
- Optimum Electrode Design for Effective Excitation of the Edge Mode by Taking Account of Its Electric Potential Distribution : SAW and Communication Device
- Gold Substrates for Scanning Tunneling Microscopy of Adsorbed Species
- Quantum Mechanical Influence on Flat-Band Capacitance in Metal-Oxide-Semiconductor Structures with a Nanometer-Thick Silicon Oxide Film and the Impact of Oxide Charge Evaluation
- Effect of Silicon Addtion on Electrical Properties of SrBi2Ta2O9 Thin Films
- Effect of Silicon Addition on Electrical Properties of SrBi_2Ta_2O_9 Thin Films
- A Partial-Ground-Plane (PGP) Silicon-on-Insulator (SOI) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) for Deep Sub-0.1μm Channel Regime
- Proposal of a Partial-Ground-Plane(PGP) Silicon-on-Insulator(SOI) MOSFET for Deep Sub-100-nm Channel Regime
- Analysis of Interface Microstructure Evolution in Separation by IMplanted OXygen(SIMOX)Wafers
- Influence of DC Electric Field on Optical Detection by Short-Gap Electrode Glow Discharge in DC Magnetic Field
- Microwave Amplification by Plasma Osaka Tube with Hot Cathode
- Noise of Optical Detection by Glow Discharge in the DC Magnetic Field: Phenomena by the Synchronizing Signals and Outside the Locking Range
- Optical Detection Voltage with Glow Discharge in a DC Magnetic Field
- Glow Discharge in DC Magnetic Field; Effect of the Applied Microwave on the Detection Sensitivity to Optical-Wave Signal
- Injection Locking Effect of Optical Detection by Glow Discharge in DC Magnetic Field
- The Gas Filled Osaka Tube Oscillator
- The Formation of Large Scale Reconstructed Images through the Use of Holograms
- Effect of Silicon Addtion on the Electrical Properties of SrBi2Ta2O9 Thin Films
- Analysis of Thin Oxide Growth Mechanisms in Partial-Pressure Rapid-Thermal Oxidation of Silicon
- Lowering of Silicon Surface Cleaning Temperature by Irradiating Low Energy Electron Beams
- Significant Impact of Transport Noise Enhancement in Scaled-Down MOSFET's