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High-technology Research Center And Faculty Of Engineering Kansai University | 論文
- Simulation Models for Silicon-on-Insulator Tunneling-Barrier-Junction Metal–Oxide–Semiconductor Field-Effect Transistor and Performance Perspective
- Hydrogenation of High-Concentration Arsenic-Doped Silicon Using Radio Frequency Hydrogen Plasma
- Effect of Silicon Addition on Electrical Properties of SrBi2Ta2O9 Thin Films