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High-technology Research Center And Faculty Of Engineering Kansai University | 論文
- Dependence of the Nonresonant Laser Ionization of Rare Gases on Laser Wavelength
- Detection of Sputtered Neutral Atoms by Nonresonant Multiphoton Ionization : Surfaces, Interfaces and Films
- Preliminary Results of Vacuum Pressure Measurement by Laser Ionization Method
- Tape Conductor Fabrication Process for High-T_c Ba_2YCu_3O_ : Electrical Properties of Condensed Matter
- Excellence of Gate Oxide Integrity in Metal-Oxide-Semiconductor Large-Scale-Integrated Circuits Based on P^-/P^- Thin-Film Epitaxial Silicon Wafers
- Simulation Models for Silicon-on Insulator Tunneling-Barrie-Junction Metal-Oxide-Semiconductor Field-Effect Transistor and Performance Perspective
- Dependence of Warpage of Czochralski-Grown Silicon Wafers on Oxygen Concentration and Its Application to MOS Image-Sensor Device
- Estimation of Epitaxial Temperature Using X-Ray Diffraction for Si Films Grown on (100) Si by Molecular Beam Epitaxy
- X-Ray Diffraction from Low-Temperature-Grown Silicon Films with Small Surface Roughness
- Simulation Models for Silicon-on-Insulator Tunneling-Barrier-Junction Metal-Oxide-Semiconductor Field-Effect Transistor and Performance Perspective
- Theory of carrier-density-fluctuation-induced transport noise in metal-oxide-semiconductor field-effect transistors
- Main Cause of Surface Waveguides Formed under LiNbO_3 Crystal Surface during Thermal Treatment
- Adsorption and Thermal or Photodecomposition of Triethylgallium and Trimethylgallium on Si(111)-7×7
- Prevention of Thermal Degradations by Using Dehydrated LiNbO_3 Crystal
- Analysis of the Thickness Edge Mode in Piezoelectric Plates and Its Application to Resonators
- Photochemical Decomposition of Triethylgallium on Si(111) Studied by Means of STM, LEED, AES and Mass Spectroscopy
- Oxidation-Induced Stacking Faults Dependent on Oxygen Concentration in Czochralski-Growrn Silicon Wafers
- Single-Mode Silicon Optical Switch with T-Shaped SiO_2 Optical Waveguide as a Control Gate
- Study on Silicon Optical Switch with T-Shape SiO_2 Waveguide as an Optical Control Gate
- An Improved Theory for Direct-Tunneling Current Characterization in a Metal-Oxide-Semiconductor System with Nanometer-Thick Silicon Dioxide Film