スポンサーリンク
Graduate School of Science | 論文
- Contactless Measurement of Semiconductor Mobility Conductivity and Carrier Concentration : B-3: CRYSTAL GROWTH AND DEFECTS
- Theoretical Considerations on Lateral Spread of Implanted Ions
- Electron-Beam Exposure(EBE) and Epitaxy of GaAs Films on CaF_2/Si Structures : Surfaces, Interfaces and Films
- Flattening the Surface of CaF_2/Si(100) Structures by Post-Growth Annealing : Surfaces, Interfaces and Films
- Characterization of Ultrathin CaF_2 Films Heteroepitaxially Grown on Si(111) Surfaces : Surfaces, Interfaces and Films
- Growth and Characterization of Compositionally Graded (Ca, Sr)F_2 Layers on Si(111) Substrates
- Optimization of the Growth Conditions of Heteroepitaxial GaAs Films on CaF_2/Si Structures
- Formation of GaAs-on-Insulator Structures on Si Substrates by Heteroepitaxial Growth of CaF_2 and GaAs
- Control of Crystal Orientations in Lattice-Mismatched SrF_2 and (Ca, Sr)F_2 Films on Si Substrates by Intermediate CaF_2 Films
- Epitaxial Relations in Lattice-Matched (Ca, Sr)F_2 Films Grown on GaAs{111} and Ge(111) Substrates
- Improvement of Crystalline Quality of Si Films on CaF_2/Si Structures by Ion Implantation and Solid Phase Recrystallization
- Single Crystalline Silicide Formation
- Formation of Thick, Thermally-Stable High-Resistivity-Layers in GaAs by Oxygen Ion Implantation
- Boron Doping Effects in Lateral Solid Phase Epitaxy of Amorphous Si Films
- Electrical and Structural Properties of Ion-Implanted and Post-Annealed Silicide Films
- Selective sulfation of chitin derivatives for biomedical functions.
- A Novel Electron-Beam Exposure Epitaxy for Growing GaAs Films on Fluoride/Si Structures
- Formation of Ohmic Contacts to n-GaAs by Solid Phase Epitaxy of Evaporated and Ion Implanted Ge Films
- Epitaxial Growth of Ge Films onto CaF_2/Si Structures
- Heteroepitaxial Growth of Group-IIa-Fluoride Films on Si Substrates