スポンサーリンク
Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan | 論文
- Invited Strain Engineering for SiGe Buffer Layers for High-Mobility Si Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Electrical Properties and Solid-Phase Reactions in Ni/Si(100) Contacts
- Dependence of Electrical Characteristics on Interfacial Structures of Epitaxial NiSi_2/Si Schottky Contacts Formed from Ni/Ti/Si System
- Pr-Oxide-Based Dielectric Films on Ge Substrates
- Behavior of Local Charge Trapping Sites in La_2O_3-Al_2O_3 Composite Films under Constant Voltage Stress
- Local Current Leakage Characterization in La_2O_3-Al_2O_3 Composite Films by Conductive Atomic Force Microscopy
- Nanoscale Observations for Degradation Phenomena in SiO_2 and High-k Gate Insulators Using Conductive-Atomic Force Microscopy
- Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors
- Film structures and electrical properties of Pr silicate formed by pulsed laser deposition
- Invited Strain Engineering for SiGe Buffer Layers for High-Mobility Si Channels (先端デバイスの基礎と応用に関するアジアワークショップ(AWAD2005))
- Thermal Stability and Electrical Properties of (La_2O_3)_(Al_2O_3)_x Composite Films
- Electrical Properties and Solid-Phase Reactions in Ni/Si(100) Contacts
- Annealing Effects on Ge/SiO2 Interface Structure in Wafer-Bonded Germanium-on-Insulator Substrates
- Conduction Properties of a Distorted Buckled Carbon Nanotube in the Vibrational Normal Mode
- Mobility Behavior of Ge1-xSnx Layers Grown on Silicon-on-Insulator Substrates
- Mechanical Properties and Chemical Reactions at the Directly Bonded Si–Si Interface
- Van der Waals Interactions for Isolated Systems Calculated Using Density Functional Theory within Plasmon-Pole Approximation
- Effect of Ga Re-evaporation on AlxGa1-xN Thin Film Growth by Dual-Beam Pulsed Laser Deposition Method in N2 Ambient
- Crystalline and Electrical Properties of Mictamict TiSiN Gate Metal–Oxcide–Semiconductor Capacitors
- Characterization and Analyses of Interface Structures in Directly Bonded Si(011)/Si(001) Substrates