Effect of Ga Re-evaporation on AlxGa1-xN Thin Film Growth by Dual-Beam Pulsed Laser Deposition Method in N2 Ambient
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概要
- 論文の詳細を見る
Ternary compound AlxGa1-xN thin films were grown on sapphire substrates by the dual-beam pulsed laser deposition (PLD) method in N2 atmosphere. Due to Ga re-evaporation, a compositional change of the film developed with change of the growth temperature. The activation energy of Ga re-evaporation was estimated to be 1–2 eV which was about 1 eV lower than that so far obtained for molecular-beam-epitaxy.
- 2003-05-15
著者
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KOBAYASHI Takeshi
Graduate School of Engineering Science, Osaka University
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Mizuno Kouhei
Graduate School Of Engineering Science Osaka University
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Masuyama Yoichiro
Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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Kiso Masaya
Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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Komatsu Shinsuke
Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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Mizuno Kouhei
Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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