スポンサーリンク
Frontier Science Innovation Center Osaka Prefecture University | 論文
- Highly Localized Light Field on Metallic Nanoarrays Prepared with DNA Nanofibers
- Band-Gap Change in Ordered/Disordered GaAs_Sb_y Layers Grown on (001) and (111)B InP Substrates : Semiconductors
- Electroluminescence of In_Ga_As/GaAs_Sb_ Type-II Multiple Quantum Well Light-Emitting Diodes Grown on (111)B InP by Molecular Beam Epitaxy : Short Note
- Molecular Beam Epitaxial Growth and Characterization of GaAs_Sb_y Layers on (111)B InP Substrates
- MBE Growth and Characterization of InGaAsSbN Quantum Well Laser Diodes at 2μm Wavelength Region grown on InP Substrates
- InAsSbN Quantum Well Laser Diodes Operating at 2-μm-Wavelength Region Grown on InP Substrates
- 2.43 μm Light Emission of InGaAsSbN Quantum Well Diodes Grown on InP Substrates
- Concerns over Genotoxicity of Nanomaterials-JEMS Symposium in 2010
- Emission Properties of InGaAsSbN Quantum Well Laser Diodes in 2 μm Wavelength Region Grown on InP Substrates
- Lasing Characteristics of InGaAsSbN Quantum Well Laser Diodes at 2-μm-Wavelength Region Grown on InP Substrates
- Electroluminescence of In0.53Ga0.47As0.99N0.01/GaAs0.5Sb0.5 Type-II Quantum Well Light-Emitting Diodes Grown on InP Substrates by Molecular Beam Epitaxy
- InAsSbN Quantum Well Laser Diodes Operating at 2-μm-Wavelength Region Grown on InP Substrates