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Department of Semiconductor Engineering, Cheongju University | 論文
- ED2000-68 / SDM2000-68 Calculation of polarization and mobile charge density in ferroelectric films on Si using TVS (Triangular Voltage Sweep) method
- ED2000-68 / SDM2000-68 Calculation of polarization and mobile charge density in ferroelectric films on Si using TVS (Triangular Voltage Sweep) method
- A Low Operating Voltage(3V) Metal-Ferroelectric-Semiconductor(MFS)FET's Using LiNbO_3/Si(100)Structures For Nonvolatile Memory Application
- A Low Operating Voltage(3V)Metal-Ferroelectric-Semiconductor(MFS)FET's Using LiNbO_3/Si(100)Structures For Nonvolatile Memory Application
- Properties of GaN MIS capacitors using Al_2O_3 as gate dielectric deposited by Remote Plasma Atomic Layer Deposition(Session1: Compound Semiconductor Devices)
- Properties of GaN MIS capacitors using Al_2O_3 as gate dielectric deposited by Remote Plasma Atomic Layer Deposition(Session1: Compound Semiconductor Devices)
- Properties of MFSFET's with Various Gate Electrodes Using LiNbO_3/Si (100) Structures
- Properties of MFSFET's with Various Gate Electrodes Using LiNbO_3/Si (100) Structures
- Properties of MFSFET's with Various Gate Electrodes Using LiNbO_3/Si (100) Structures
- Properties of LiNbO_3 thin films fabricated by CSD (Chemical Solution Decomposition) method(AWAD2003 : Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices)
- Properties of LiNbO_3 thin films fabricated by CSD (Chemical Solution Decomposition) method (AWAD2003 (Asia-Pacific Workshop on Fundamental and Application of Advanced Semiconductor Devices))
- Fabrications and Properties of Pt/LiNbO_3/AlN/Si(100)Structures for Nonvolatile Memory Application
- Fabrications and Properties of Pt/LiNbO_3/AIN/Si (100) Structures for Nonvolatile Memory Application
- Characteristics of SiOF Films Formed by Remote Plasma Enhanced Chemical Vapor Deposition with SF_6 Gas
- 線形弾性変形を利用したメカニズムの創生
- Bridge resistance deviation-to-period converter with high linearity