スポンサーリンク
Department of Precision Science and Technology, Graduate School of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan | 論文
- Photoluminescence Study of Defect-Free Epitaxial Silicon Films Grown at Low Temperatures by Atmospheric Pressure Plasma Chemical Vapor Deposition
- Antistatic Technique for Suppressing Charging in Focused Ion Beam Systems Using Microprobing and Ion-Beam-Assisted Deposition
- Beveling of Silicon Carbide Wafer by Plasma Etching Using Atmospheric-Pressure Plasma
- Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
- Surface Hall Potentiometry for Characterizing Semiconductor Films
- Influence of H2/SiH4 Ratio on the Deposition Rate and Morphology of Polycrystalline Silicon Films Deposited by Atmospheric Pressure Plasma Chemical Vapor Deposition
- Low-Temperature Growth of Epitaxial Si Films by Atmospheric Pressure Plasma Chemical Vapor Deposition Using Porous Carbon Electrode
- Low-Temperature Crystallization of Amorphous Silicon by Atmospheric-Pressure Plasma Treatment in H2/He or H2/Ar Mixture
- Reaction of Hydrogen-Desorbed Si(100) Surfaces with Water during Heating and Cooling