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Department of Precision Engineering, faculty of Engineering, Osaka University | 論文
- Measurement of Residual Stress in Bent Silicon Wafers by Means of Photoluminescence
- Oxygen-Related Donors Stable at 700-800℃ in CZ-Si Crystals
- Oxygen-Related Donors Generated at 800℃ in CZ-Si
- In-Situ Observation of Moving Dislocations in KCl Crystal by Laser-Light Topography
- Formation of Thin Oxide Films on Room-Temperature Silicon (100) by Exposure to a Neutral Beam of Hyperthermal Atomic and Molecular Oxygen
- Oxidation Properties of Hydrogen-Terminated SI (001) Surfaces Following Use of a Hyperthermal Broad Atomic Oxygen Beam at Low Temperatures : Instrumentation, Measurement, and Fabrication Technology
- White X-ray Topography of Lattice Undulation in Bonded Silicon-on-Insulator Wafers
- Synchrotron X-Ray Topography of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
- Observation of Lattice Undulation of Commercial Bonded Silicon-On-Insulator Wafers by Synchrotron X-Ray Topography : Structure and Mechanical and Thermal Properties of Condensed Matter
- Large-Area X-Ray Topographs of Lattice Undulation of Bonded Silicon-On-Insulator Wafers
- Effect of Low-Energy Ion Bombardment upon Field-Stimulated Exoelectron Emission from Tungsten Surfaces
- Surface Reaction of a Low-Flux Atomic Oxygen Beam with a Spin-Coated Polymide Film : Synergetic Effect of Atomic Oxygen and Ultraviolet Exposures
- Surface Reaction of a Low Flux Atomic Oxygen Beam with a Spin-Coated Polyimide Film : Translational Energy Dependence on the Reaction Efficiency
- Effects of External Stresses on the Low Temperature Thermal Oxidation of Silicon
- Surface Characterization of Carbon Fibers Exposed to 5 eV Energetic Atomic Oxygen Beam Studied by Wetting Force Measurements
- Large-Scale Atomistic Modeling of Thermally Grown SiO_2 on Si(111) Substrate
- Effects of Thermal History on Residual Order of Thermally Grown Silicon Dioxide
- Anomalous Enhancement of Photoacoustic Signal in Metal-Film/Metal-Foil System
- Thermal Degradation of HfSiON Dielectrics Caused by TiN Gate Electrodes and Its Impact on Electrical Properties
- Granulocyte-colony stimulating factor-producing esophageal carcinoma: serum level as a marker for monitoring the effects of treatment