スポンサーリンク
Department of Physics and Chemistry Gakushuin University | 論文
- Activation Energies of the 1/3 and 2/3 Fractional Quantum Hall Effect in GaAs/Al_xGa_As Heterostructures
- Negative Magnetoresistance and Inelastic Scattering Time in Two-Dimensional Electron Systems in GaAs/Al_xGa_As Heterojunction Interfaces
- Electron Concentration and Mobility Dependence of Breakdown of the Quantum Hall Effect
- Part II Radio Galaxies
- Introduction and General Review
- Determination of the Fine Structure Constant Based on the Quantum Hall Effect
- Quantized Hall Resistivity in Si-MOSFETs Measured at Liq.^3He Temperatures
- Superconductivity in InAs Surfaces
- Magnetic Structure of the Intermetallic Compound MnHg
- Effect of Residual Stress on Hole Mobility of SOS MOS Devices
- Isotopic Abundance of Carbon in Primary Cosmic Rays
- Intermediate Coupling Meson Theory of Nuclear Forces, II
- Magnetooptical Effects of Magnetic Fluid
- Influence of Crystalline Defects and Residual Stress on the Electrical Characteristics of SOS MOS Devices
- Intermediate Coupling Meson Theory of Nuclear Forces, I : General Formulation
- High-Temperature Specific Heats of Nb_3X_4 with X=S, Se and Te
- Mobility Hump and Inversion Layer Subbands in Si on Sapphire
- High Field Torque Magnetometer for Superconducting Magnets
- A.C. and D.C. Field Effects on Cleaned Germanium Surfaces
- On the Maze Domain of Silicon-Iron Crystal (I)