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Department of Physical Electronics, Tokyo Institute of Technology | 論文
- Formation of an Atomically Abrupt Si/Ge Hetero-Interface
- Formation of Atomically Abrupt Si/Ge Hetero-Interface
- A Proposed Atomic-Layer-Deposition of Germanium on Si Surface
- A Proposed Atomic-Layer-Deposition of Germanium on Si(100)
- Effect of Interfacial Space Charges and Coupling Electrodes on Organic Single Electron Tunneling Device(Special Issue on Recent Progress in Organic Molecular Electronics)
- A New-Type 1.5 〜 1.6 μm GaInAsP/InP BIG-DBR Laser by an Island-Type Mesa Process
- Light Emission from Quantum-Box Structure by Current Injection
- Spontaneous Recombination, Gain and Refractive Index Variation for 1.6 μm Wavelength InGaAsP/InP Lasers
- The Temperature Dependence of the Efficiency and Threshold Current of In_Ga_xAs_yP__ Lasers Related to Intervalence Band Absorption
- 1.5-1.6 μm Wavelength (100) GaInAsP/InP DH Lasers : B-3: LASER
- Room Temperature CW Operation of GaInAsP/InP DH Laser Emitting at 1.51 μm
- Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 μm
- 1.67 μm Ga_In_As/InP DH Lasers Double Cladded with InP by LPE Technique
- Conditions of LPE Growth for Lattice Matched GaInAsP/InP DH Lasers with(100)Substrate in the Range of 1.2-1.5 μm
- Ga_xIn_As_yP_-InP Injection Laser Partially Loaded with Distributed Bragg Reflector
- An 8-Bit 600-MSps Flash ADC Using Interpolating and Background Self-Calibrating Techniques
- Diagnosis of Tis/T1 Breast Cancer Extent by Multislice Helical CT : A Novel Classification of Tumor Distribution
- Intraband Relaxation Time in Compressive-Strained Quantum-Well Lasers
- Photoinduced Gate Modulation and Temperature Dependence in the Coulomb Staircase of Organic Single Electron Tunneling Junctions
- Lateral Growth of Poly-Si Film by Excimer Laser and Its Thin Film Transistor Application