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Department of Physical Electronics, Tokyo Institute of Technology | 論文
- Drastic Enlargement of Grain Size of Excimer-Laser-Crystallized Polysilicon Films
- Mobility Measurement Based on Visualized Electric Field Migration in Organic Field-Effect Transistors
- Hysteresis Behavior Analysis of Organic Field Effect Transistor with P(VDF-TrFE) LB film gate-insulator
- Hysteresis behavior analysis of organic field effect transistor with P(VDF-TrFE) LB film gate-insulator (有機エレクトロニクス)
- High-Quality n-GaInAs Grown by OMVPE Using Si_2H_6 by High-Velocity Flow
- Collection by a Simple Bag Method and the Function of Granulocytes in Granulocyte Transfusion
- Displacement-Current Gerneration from Spread Monolayers of Poly(vinyl alcohol)s Bearing Azobenzene Sides
- Twin-Guide Laser with Narrow Radiation Angle
- Monolithic Integration of Laser and Amplifier/Detector by Twin-Guide Structure
- A Performance Model for the Design of Pipelined ADCs with Consideration of Overdrive Voltage and Slewing
- The Effects of Switch Resistances on Pipelined ADC Performances and the Optimization for the Settling Time(Analog Circuits and Related SoC Integration Technologies)
- ZnSe:Mn DC-Electroluminesent Cells Using Di-π-Cyclopentadienyl Manganese as a New Manganese Source Fabricated by Plasma-Assisted MOCVD
- Characterization of Undoped, N- and P-Type Hydrogenated Nanocrystalline Silicon Carbide Films Deposited by Hot-Wire Chemical Vapor Deposition at Low Temperatures
- Preparation of Hydrogenated Amorphous Silicon Carbon Nitride Films by Hot-Wire Chemical Vapor Deposition Using Hexamethyldisilazane for Silicon Solar Cell Applications
- Fabrication of Microcrystalline Cubic Silicon Carbide/Crystalline Silicon Heterojunction Solar Cell by Hot Wire Chemical Vapor Deposition
- Preparation of Nanocrystalline Silicon in Amorphous Silicon Carbide Matrix
- Low-Temperature Deposition of Highly Conductive n-Type Hydrogenated Nanocrystalline Cubic SiC Films for Solar Cell Applications
- TiO_2-Coated Transparent Conductive Oxide (SnO_2:F) Films Prepared by Atmospheric Pressure Chemical Vapor Deposition with High Durability against Atomic Hydrogen
- Intrinsic Microcrystalline Silicon Thin Films Prepared by Hot-Wire Cell Method and Their Application to Solar Cells
- Properties of Hydrogenated Microcrystalline Cubic Silicon Carbide Films Deposited by Hot Wire Chemical Vapor Deposition at a Low Substrate Temperature