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Department of Physical Electronics, Tokyo Institute of Technology | 論文
- 2-Step Growth Method and Microcrystalline Silicon Thin Film Solar Cells Prepared by Hot Wire Cell Method
- Highly Conductive Boron Doped Microcrystalline Si Films Deposited by Hot Wire Cell Method and its Application to Solar Cells
- Microcrystalline Silicon Films and Solar Cells Prepared by Photochemical Vapor Deposition on Textured SnO_2 with High Haze Factors
- Heavily Carbon-Doped P-Type GaAs Grown on GaAs Substrates with Various Orientations by Metalorganic Molecular Beam Epitaxy
- High Quality Amorphous Silicon Films Prepared by Atmospheric-Pressure Photo-CVD : Condensed Matter
- Optically Detected Magnetic Resonance in Fluorinated Amorphous Silicon (a-Si: H, F)
- Evaluation of Deep States in Amorphous-Silicon / Silicon-Nitride System from Charge-Coupled Device Characteristics : Semiconductors and Semiconductors Devices
- p-Channel Amorphous Silicon Thin-Film Transistors with High Hole Mobility : Semiconductors and Semiconductor Devices
- Properties of Metalorganic Precursors for Chemical Vapor Deposition of Oxide Superconductors
- Numerical Analysis of the Dynamic Characteristics of Amorphous Silicon Thin-Film Transistors : Semiconductors and Semiconductor Devices
- Computer Simulation and Measurement of Capacitance-Voltage Characteristics in Quantum Wire Devices of Trench-Oxide MOS Structure
- Fabrication of Nanostructure by Anisotropic Wet Etching of Silicon : Techniques, Instrumentations and Measurement
- Estimation of Collector Current Spreading in InGaAs SHBT Having 75-nm-Thick Collector
- Analysis of Conformational Transition Effect on Maxwell Displacement Current : A Kinkable Rod Model
- Current Gain and Voltage Gain in Hot Electron Transistors without Base Layer(THz Devices,Heterostructure Microelectronics with TWHM2005)
- Phase Coherence and Temperature Dependence of Current-Voltage Characteristics at Low-Current and Low-Voltage Region of Double-Barrier Resonant-Tunneling Diode
- Phase-Breaking Effect Appearing in the Current-Voltage Characteristics of Double-Barrier Resonant Tunneling Diodes - Theoretical Fitting Over Four Orders of Magnitude -
- Phase Breaking Effect Appearing in I-V Characteristics of Double-Barrier Resonant-Tunneling Diodes : Theoretical Fitting Over Four Orders of Magnitude
- Inhibitory Effects of the Methanol Extract of Ganoderma lucidum on Mosquito Allergy–Induced Itch-Associated Responses in Mice
- Direct probing of carrier behavior in electroluminescence indium-zinc-oxide/N,N'-di-〔(1-naphthyl)-N,N'-diphenyl〕-(1,1'-biphenyl)-4,4'-diamine/tris(8-hydroxy-quinolinato)aluminum(3)/LiF/Al diode by time-resolved optical second-harmonic generation (Special