スポンサーリンク
Department of Physical Electronics, Tokyo Institute of Technology | 論文
- Wrapped Alignment Marks for Fabrication of Interference/Diffraction Hot Electron Devices
- W/Cr/Au/SiO_2 Composite Alignment Mark for Fabrication of Interference/Diffraction Hot Electron Devices
- Nanostrueture Alignment for Hot Electron Interference/Diffraction Devices
- Ultrafine Fabrication Technique for Hot Electron Interference/Diffraction Devices
- Development of a New System for Measuring Skull Bone Thickness by the Pulse compression Method
- Ultrasonic Flaw Detection for High Impedance Materials Using a Transmission Line Coupling Method
- High Signal-to-Noise Ratio Ultrasonic Point Detection Method using a Fused Quartz Rod as a Pulse Compression Filter and a Sensor
- Mammary ductoscopy : current issues and perspectives
- Screening ultrasonography revealed 15% of mammographically occult breast cancers
- Percutaneous Endoscopy-Guided Biopsy of an Intracystic Tumor with a Mammary Ductoscopy
- Effect of Spacer Layer Thickness on Energy Level Width Narrowing in GaInAs/InP Resonant Tunneling Diodes Grown by Organo-Metallic Vapor Phase Epitaxy
- Transport Anisotropy of Si Delta-Doped Layer in InP Grown by OMVPE
- Potential Drop at Electrode Contact of Organic Field-Effect Transistors Evaluated by Optical Second Harmonic Generation
- Holographic Recording in Cerium Doped Strontium Barium Niobate α-Axis Single Crystal Fibers : Future Technology
- Holographic Recording in Cerium Doped Strontium Barium Niobate α-Axis Single Crystal Fibers
- Growth and Characterization of ZnCdSe/BeZnTeII-VI Compound Type-II Superlattices on InP Substrates and Their Application for Visible Light Emitting Devices : Semiconductors
- Growth and Characterization of Nitrogen-Doped MgSe/ZnSeTe Superlattice Quasi-Quaternary Oil InP Substrates and Fabrication of Light Emitting Diodes
- Crystal Growth and Characterization of II-VI Compound Light Emitting Diodes with Novel Superlattice Quasi-Quaternary Cladding Layers on InP Substrates
- High Responsivity in Optically Controlled Field-Effect Transistor Using Direct Wafer Bonding Technique
- THE ORIGIN OF RIBONUCLEASE P RNA (m1RNA), AS VIEWED FROM POLY-tRNA THEORY