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Department of Physical Electronics, Tokyo Institute of Technology | 論文
- Analysis of charge accumulation in pentacene field effect transistor with ferroelectric gate insulator on the basis of Maxwell-Wagner model
- Analysis of Carrier Injection into Pentacene FET Using Maxwell-Wagner Model(Organic Molecular Devices,Towards the Realization of Organic Molecular Electronics)
- Electric field distribution in organic field effect transistor evaluated by microscopic second harmonic generation
- Analysis of hole trapping into pentacene FET by Optical Second Harmonic Generation and C-V measurements
- Analysis of Pentacene FET characteristics using a Maxwell-Wagner model
- Analysis of organic FET operation based on Maxwell-Wagner effect(Organic molecular devices)
- Pentacene thickness dependence of FET properties in bottom contact structure ; Estimation of the effective channel thickness
- Lack of Effect of Aciclovir on Metabolism of Theophylline and Expression of Hepatic Cytochrome P450 1A2 in Rats(Biopharmacy)
- Effect of Chitosan on Gastrointestinal Absorption of Water-Insoluble Drugs Following Oral Administration in Rats(Biopharmacy)
- Increase in Collector Current in Hot-Electron Transistors Controlled by Gate Bias
- High Deposition Rate of Polycrystalline Silicon Thin Films Prepared by Hot Wire Cell Method
- Preparation of a Thin Silicon Nitride Layer by Photo-CVD and Its Application to InP MISFET's
- Characterization of Nitride Layer on 6H-SiC Prepared by High-Temperature Nitridation in NH_3
- Preparation of Carbon Films by Hot-Filament-Assisted Sputtering for Field Emission Cathode
- The Majority of Lymphocytes in the Bone Marrow, Thymus and Extrathymic T Cells in the Liver Are Generated In Situ from Their Own Preexisting Precursors
- Anomalous Magneto-Optic Kerr Effect in Ordered Perovskites A_2FeMoO_6 (A=Ba, Sr, Ca)
- Magneto-Optic Kerr Effect in RF Sputtered Co-Cr Film with Perpendicular Anisotropy
- Anomalous Magneto-Optical Kerr Rotation in Sr_2FeMoO_6
- Fabrication of GaInAs/GaInAsP/InP Multi-Quantum-Wires and -Boxes by Substrate-Potential-Controlled Electron Cyclotron Resonance Reactive Ion Beam Etching
- Vertical-Type Amorphous-Silicon Field-Effect Transistors with Small Parasitic Elements