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Department of Physical Electronics, Tokyo Institute of Technology | 論文
- Electric Field Induced Reflection in GaInAsP/InP MQW Structure
- Electric Field-Induced Absorption in GaInAsP/InP MQW Structures Grown by LPE
- High Sensitivity InSb Hall Effect Biosensor Platform for DNA Detection and Biomolecular Recognition Using Functionalized Magnetic Nanobeads
- High Sensitivity InSb Ultra-Thin Film Micro-Hall Sensors for Bioscreening Applications
- Focusing Method in High-Impedance Material using Transmission Line Coupler : Ultrasonic Transmission Line Coupling Method
- Atomic Layer Etching of Silicon by Thermal Desorption Method
- Low-Temperature Si Epitaxy by Photochemical Vapor Deposition with SiH_2Cl_2
- p-Type a-SiC:H Films Using Triethylboron and Its Application to Solar Cells
- Effects of Deuterium on Low-Temperature Si Epitaxy by Photo-Chemical Vapor Deposition
- Heavily P-Doped (>10^ cm) Silicon Films Grown by Photochemical Vapor Deposition at a Very Low Temperature of 250℃
- Photochemical Vapor Deposition of Si/Si_Ge_x Strained Layer Superlattices at 250℃ : Silicon Heterostructures(Solid State Devices and Materials 1)
- Epitaxial Growth of Silicon by Plasma Chemical Vapor Deposition at a Very Low Temperature of 250℃
- Thymosin-α1 increases intrahepatic NKT cells and CTLs in patients with chronic hepatitis B
- Thrombopoietin receptor (c-Mpl) is constitutively expressed on platelets of patients with liver cirrhosis, and correlates with its disease progression
- Defect Reduction in Al_xGa_N Films Grown by Metal Organic Chemical Vapor Deposition
- Novel Reconfigurable Logic Gates Using Spin Metal-Oxide-Semiconductor Field-Effect Transistors
- Chemical Vapor Deposition Based Preparation on Porous Silica Films
- Atomic-Layer Epitaxy of Silicon on(100)Surface
- Hetero Atomic-Layer Epitaxy of Ge on Si(100)
- A Fluorinated Organic-Silica Film with Extremely Low Dielectric Constant