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Department of Physical Electronics, Tokyo Institute of Technology | 論文
- Design of Domain Wall Displacement Detection Disk with Groove Recording for High Density and Wide Recording Power Tolerance
- Association of Estrogen Receptor Gene Polymorphisms With Susceptibility to Adolescent Idiopathic Scoliosis
- Heavy Fermion Compound SmOs_4Sb_ in Vicinity of Ferromagnetic Critical Point(Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Ar Ion Laser-Assisted MOVPE of ZnSe Using DMZn and DMSe as Reactants
- Control of the Arrangement of the Native Gallium Vacancies in Ga_2Se_3 on (100)GaAs by Molecular Beam Epitaxy
- Formation of ZnGa_2Se_4 Epitaxial Layer during Molecular Beam Epitaxial Growth of Ga_2Se_3 on ZnSe
- Raman Study of Epitaxial Ga_2 Se_3 Films Grown by Molecular Beam Epitaxy
- Optical Anisotropy of Vacancy-Ordered Ga_2Se_3 Grown by Molecular Beam Epitaxy
- Effects of Substrate Materials and Their Properties on Photoassisted Metalorganic Vapor Phase Epitaxy of ZnSe
- Metalorganic Chemical Vapor Deposition of ZnO Using D_2O as Oxidant
- Optimization of ZnO Films for Amorphous Silicon Solar Cells
- Large-Area ZnO Thin Films for Solar Cells Prepared by Photo-Induced Metalorganic Chemical Vapor Deposition
- Mobility Enhancement of Textured ZnO Films by Ultraviolet Light Irradiation
- Analysis of Phase Noise Degradation Considering Switch Transistor Capacitances for CMOS Voltage Controlled Oscillators
- A Wide-Tunable LC-Based Voltage-Controlled Oscillator Using a Divide-by-N Injection-Locked Frequency Divider
- The Optimum Design Methodology of Low-Phase-Noise LC-VCO Using Multiple-Divide Technique
- High-performance and reliable InP/InGaAs HBTs operating at high current density (Electron devices: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- High-performance and reliable InP/InGaAs HBTs operating at high current density (Silicon devices and materials: 第15回先端半導体デバイスの基礎と応用に関するアジア・太平洋ワークショップ(AWAD2007))
- On Dynamic Fault Tolerance for WSI Networks
- Low-Damage GaInAs(P)/InP Nanometer Structure by Low-Pressure ECR-RIBE