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Department of Materials Science and Engineering, North Carolina State University | 論文
- Nanostructuring of TiNi Alloy by SPD Processing for Advanced Properties
- B2-CoZr規則合金のメカニカルミリングによるアモルファス化の微視的メカニズム
- Defect Formation during Hetero-Epitaxial Growth of Aluminum Nitride Thin Films on 6H-Silicon Carbide by Gas-Source Molecular Beam Epitaxy
- Medium Field Breakdown Origin on Metal Oxide Semiconductor Capacitor Containing Grown-in Czochralski Silicon Crystal Defects
- Medium Field Breakdown Following Local Tunneling Current on MOS Capacitor Containing Grown-in CZ Crystal Defects
- Growth of GaAs on High Temperature Hydrogen Pretreated (100) Si Substrates by Molecular Beam Epitaxy : Semiconductors and Semiconductor Devices
- Ferroelectric and Colossal Magnetoresistive Properties of a PbZr_Ti_xO_3/La_Sr_xMnO_3 Heterostructure Film
- Multimodality functional imaging evaluation in a patient with Rasmussen's encephalitis
- メカニカルアロイングによって作成したNb3Snアモルファス合金の短範囲構造
- Investigation on Defects in Czochralski Silicon with High-Sensitive Laser/Microwave Photoconductance Technique
- Optical Emission during Layered Growth of PrBa_2Cu_3O_/YBa_2Cu_3O_ High T_c Superconducting Thin Film by Pulsed Laser Evaporation
- Growth of GaN and Al_Ga_N on Patterened Substrates via Organometallic Vapor Phase Epitaxy
- Heteroepitaxy of Wide Bandgap Ternary Semiconductors
- Hydrothermal synthesis and characterization of TiO_2 nanostructures using LiOH as a solvent
- Influence of Crystal Thermal History on Surface Recombination Lifetime at Elevated Temperatures in Magnetic-Field-Applied Czochralski Silicon
- Effect of Ultraviolet Light Irradiation on Noncontact Laser Microwave Lifetime Measurement
- Substitutional Diffusion of Transition Metal Impurities in Silicon