Growth of GaAs on High Temperature Hydrogen Pretreated (100) Si Substrates by Molecular Beam Epitaxy : Semiconductors and Semiconductor Devices
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1988-08-20
著者
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Humphreys T
Department Of Physics North Carolina University
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Humphreys T.
Department Of Physics North Carolina State University
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Das K.
Department of Physics, Stewart Sc. College
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Das K
Kobe Steel Usa Inc. North Carolina Usa
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POSTHILL John
Research Triangle Institute
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PARIKH N.
Department of Physics and Astronomy, University of North Carolina
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POSTHILL J.
Department of Materials Science and Engineering, North Carolina State University
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TARN J.
Department of Materials Science and Engineering, North Carolina State University
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JAING B.
Department of Materials Science and Engineering, North Carolina State University
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WORTMAN J.
Department of Electrical and Computer Engineering, North Carolina State University
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Wortman J
North Carolina State Univ. Nc Usa
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Parikh Nalin
Department Of Physics And Astronomy University Of North Carolina
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Tarn J.
Department Of Materials Science And Engineering North Carolina State University
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Jaing B.
Department Of Materials Science And Engineering North Carolina State University
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Das K.
Department Of Applied Geology Ism University
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