Growth and Characterization of Titanium Silicide Films on Natural Diamond C(001) Substrates
スポンサーリンク
概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1992-08-15
著者
-
Humphreys T
Department Of Physics North Carolina University
-
Humphreys Trevor
Department Of Physics North Carolina University
-
LABRASKA John
Department of Physics, North Carolina University
-
TURNER Kevin
Department of Physics, North Carolina University
-
NEMANICH Robert
Department of Physics, North Carolina University
-
DAS Kalyankumar
Kobe Steel USA, Inc., Electronic Materials Center
-
POSTHILL John
Research Triangle Institute
-
HUNN John
Department of Physics and Astronomy, University of North Carolina
-
PARIKH Nalin
Department of Physics and Astronomy, University of North Carolina
-
Hunn John
Department Of Physics And Astronomy University Of North Carolina
-
Nemanich R
North Carolina State Univ. Nc Usa
-
Nemanich Robert
Department Of Physics North Carolina State University
-
Turner Kevin
Department Of Physics North Carolina University
-
Parikh Nalin
Department Of Physics And Astronomy University Of North Carolina
-
Labraska John
Department Of Physics North Carolina University
-
Das Kalyankumar
Kobe Steel Usa Inc. Electronic Materials Center
関連論文
- Growth and Characterization of Titanium Silicide Films on Natural Diamond C(001) Substrates
- High Temperature Rectifying Contacts Using Heteroepitaxial Ni Films on Semiconducting Diamond
- Raman Scattering Characterization of Strain in GaAs Heteroepitaxial Films Grown on Sapphire and Silicon-on-Sapphire Substrates
- Growth of GaAs on High Temperature Hydrogen Pretreated (100) Si Substrates by Molecular Beam Epitaxy : Semiconductors and Semiconductor Devices
- Growth of GaN and Al_Ga_N on Patterened Substrates via Organometallic Vapor Phase Epitaxy