High Temperature Rectifying Contacts Using Heteroepitaxial Ni Films on Semiconducting Diamond
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1991-08-01
著者
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Humphreys T
Department Of Physics North Carolina University
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Humphreys T.
Department Of Physics North Carolina State University
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Das K
Kobe Steel Usa Inc. North Carolina Usa
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NEMANICH Robert
Department of Physics, North Carolina University
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POSTHILL John
Research Triangle Institute
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LABRASCA J.
Department of Physics, North Carolina State University
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NEMANICH R.
Department of Physics, North Carolina State University
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DAS K.
Kobe Steel Research Laboratories, Electronic Materials Center
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POSTHILL J.
Research Triangle Institute
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Labrasca J.
Department Of Physics North Carolina State University
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Nemanich R
North Carolina State Univ. Nc Usa
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Das K.
Kobe Steel Research Laboratories Electronic Materials Center
関連論文
- Growth and Characterization of Titanium Silicide Films on Natural Diamond C(001) Substrates
- High Temperature Rectifying Contacts Using Heteroepitaxial Ni Films on Semiconducting Diamond
- Raman Scattering Characterization of Strain in GaAs Heteroepitaxial Films Grown on Sapphire and Silicon-on-Sapphire Substrates
- Growth of GaAs on High Temperature Hydrogen Pretreated (100) Si Substrates by Molecular Beam Epitaxy : Semiconductors and Semiconductor Devices