Growth of GaN and Al_<0.2>Ga_<0.8>N on Patterened Substrates via Organometallic Vapor Phase Epitaxy

概要

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The selective growth of GaN and Al_<0.2>Ga_<0.8>N has been achieved on stripe and circular patterned GaN/AIN/6H-SiC(0001) multilayer substrates. Growth morphologies on the stripe patterns were a function of the widths of the stripes and the flow rate of trietlnylgallium. No ridge growth was observed along the top edges of the truncated stripe patterns. Smooth (0001) top facets formed on stripes >_-5 μm wihe. Uniform hexagonal pyramid arrays of undoped GaN and Si-doped GaN were successftully grown on 5 μm circular patterns. Field emission measurements of a Si-doped GaN hexagonal pyramid array exhibited a turn-on field of 25 V / μm for an emission current of 10.8 nA at an anode-to-sample distance of 27 μm.
社団法人応用物理学会の論文
1997-05-01