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Department of Engineering and System Science National Tsing Hua University | 論文
- Effects of Arsenic Concentration in Gate Oxide on Electrical Properties of Metal-Oxide-Si Capacitors
- Radiation Dosimeters for High Dose by Commercial PMOS Transistors Using Normalized Drain Current as Dosimetric Parameter
- Metal-Oxide-Si Capacitors Hot-Electron and Radiation Hardness Improvement by Gate Electrodes Deposited Using Amorphous Si and Gate Oxides Rapid Thermal Annealed in N_20
- Improved Blocking Voltage in Diode with Neutron-Transmutation-Doped Silicon by Field Oxide Annealed in N2O
- Electrical characteristic improvement of high-k gated MOS device by nitridation treatment using plasma immersion ion implantation (PIII)
- Reduction of Plasma Etching Induced Electrical Degradation in Metal-Oxide-Si Capacitors by Furnace Grown Oxides Rapid Thermal Annealed in N_2O
- Extraction Method of Threshold Voltage and Transconductance to Assess Radiation Effects on MOS Circuits
- Optimizing the Arrangement of Two-Stage Thermoelectric Coolers through a Genetic Algorithm
- ICONE11-36505 NONLINEAR ANALYSIS FOR A DOUBLE-CHANNEL NATURAL CIRCULATION LOOP UNDER LOW-PRESSURE CONDITIONS
- THE EFFECT OF ADDITIVE TO THE NYLON 4 DIALYSIS MEMBRANES
- BWR Parametric Sensitivity Effect of Regional Mode Instability on Stability Boundary
- The wrap-around problem and optimal padding in the exit wave reconstruction using HRTEM images
- Determination of tetrodotoxin in human urine and blood using C18 cartridge column, ultrafiltration and LC-MS
- A Low Pressure Inductively-Coupled High Density Plasma Source for VLSI/ULSI Processing
- Acrosswind Aerodynamic Damping of An Isolated Square Shaped Building
- PROTECTIVE EFFECT OF ALLOPURINOL ON RAT LIVER DURING COLD PRESERVATION
- Simulation Study of Reflective-Type Carbon Nanotube Field Emission Display
- Validation of CFD simulations on the wind loads for tall buildings' preliminary design
- HRTEM Observation of Heteroepitaxial Diamond Nucleation on (001) Silicon Substrate by MPECVD Synthesis
- A Study of Longitudinal and Transversal Range Parameters of Ion-Implanted 40 -360 keV Molybdenum in Silicon