A Study of Longitudinal and Transversal Range Parameters of Ion-Implanted 40 -360 keV Molybdenum in Silicon

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This paper presents an experimental and theoretical study of longitudinal and transversal range parameters of molybdenum ions ranging from 40 to 360 keV implanted in silicon. In the experimental part of this study, silicon wafers were tilted by 7° and 55° at the time they were implanted with molybdenum ions. The implanted-ion depth profiles were detected by means of secondary ion mass spectroscopy (SIMS) measurements. The measured range parameters were extracted from fitting the measured implanted-ion depth profiles to a Pearson distribution. In addition, the transversal range straggling measurements were obtained by using the Furukawa and Matsumura formula. Measured range parameters were also compared to the values calculated from the Biersack theory. It was found that the calculated values of projected range, longitudinal range straggling, skewness, kurtosis, and transversal range straggling agreed to the corresponding measured values within (on average) 9%, 7%, 32%, 17%, and 10%, respectively.
社団法人応用物理学会の論文
1999-01-15