スポンサーリンク
Department of Engineering and System Science, National Tsing Hua University | 論文
- High-k materials and poly-Si nanowires in nonvolatile memory for 3D flash memory and display panel applications(Session 8A : Memory 2)
- High-k materials and poly-Si nanowires in nonvolatile memory for 3D flash memory and display panel applications(Session 8A : Memory 2)
- Reduced Interfacial Layer Thickness and Gate Leakage Current of ALD Grown HfAlO with TaN Gates using Chemical Oxides and Spike-Annealing
- Improvement of Hot-Electron Hardness in Metal-Oxide-Semiconductor Devices by Combination of Gate Electrode Deposited Using Amorphous Si and Gate Oxide Grown in N_2O
- Characterizing Optical Constants of Thin Films for Vacuum Ultraviolet Lithography Applications
- Effects of HfO_xN_y Gate-Dielectric Nitrogen Concentration on the Charge Trapping Properties of Metal-Oxide-Semiconductor Devices
- Physical and Reliability Characteristics of Metal-Oxide-Semiconductor Devices with HfO_xN_y Gate Dielectrics on Different Surface-Oriented Substrates
- Suppression of Plasma Charging Damage in Sub-Micron Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) with Gate Oxynitride by Two-Step Nitridation : Semiconductors
- Reduction of Plasma Etching Induced Electrical Degradation in Metal-Oxide-Si Capacitors by Furnace Grown Oxides Rapid Thermal Annealed in N_2O
- ICONE11-36504 NONLINEAR STABILITY ANALYSIS FOR MULTIPLE BOILING CHANNEL SYSTEM BASED ON A MULTI-POINT REACTOR MODEL
- Operation Characterization of Flash Memory with Silicon Nitride/Silicon Dioxide Stack Tunnel Dielectric
- Effect of Teflon Covers on Thermoluminescence of CaF_2:Tm
- Simulation Study of Phase-Change Optical Recording Disks
- Effects of Arsenic Concentration in Gate Oxide on Electrical Properties of Metal-Oxide-Si Capacitors
- Improved Blocking Voltage in Diode with Neutron-Transmutation-Doped Silicon by Field Oxide Annealed in N2O
- Electrical characteristic improvement of high-k gated MOS device by nitridation treatment using plasma immersion ion implantation (PIII)
- Extraction Method of Threshold Voltage and Transconductance to Assess Radiation Effects on MOS Circuits
- Optimizing the Arrangement of Two-Stage Thermoelectric Coolers through a Genetic Algorithm
- BWR Parametric Sensitivity Effect of Regional Mode Instability on Stability Boundary
- A Study of Longitudinal and Transversal Range Parameters of Ion-Implanted 40 -360 keV Molybdenum in Silicon