High-k materials and poly-Si nanowires in nonvolatile memory for 3D flash memory and display panel applications(Session 8A : Memory 2)

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概要

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• This work presents the feasibility of two Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) type nonvolatile memory (NVM) devices. The first NVM device is TaN-Al_2O_3-Si_3N_4SiO_2-Si (TANOS) NVM with Pi-gate (π-gate) and poly-Si nanowire channels (NWs) structure. This TANOS NVM device is characterized by a fast program/erase (P/E) speed, a 3 V memory window (Δ V_<th>) that can be achieved by applying V_g = 18 V in 10 μs, a feature in which 70 % of the initial memory window is maintained after 10^4 P/E-cycle stress, and a two-bit operation. The other NVM device has a Pi-gate poly-Si NWs structure with a HfO_2 charge trapping layer (SOHOS), as well as a HfO_2 charge trapping layer that has a higher program efficiency, the better retention characteristics and more P/E cycles than that with the Si_3N_4 charge trapping layer.

• 2010-06-23

著者

• Chun Yung-Chun

  Department of Engineering and System Science, National Tsing Hua University

• Hung Min-Feng

  Department of Engineering and System Science, National Tsing Hua University

• Chen Jiang-Hung

  Department of Engineering and System Science, National Tsing Hua University

• Chen Lun-Chun

  Department of Engineering and System Science, National Tsing Hua University

• Jiang Ji-Hong

  Department of Engineering and System Science, National Tsing Hua University

• Hung Min-feng

  Department Of Engineering And System Science National Tsing Hua University

• Chen Lun-chun

  Department Of Engineering And System Science National Tsing Hua University

• Jiang Ji-hong

  Department Of Engineering And System Science National Tsing Hua University

• Chun Yung-chun

  Department Of Engineering And System Science National Tsing Hua University

• Chen Jiang-hung

  Department Of Engineering And System Science National Tsing Hua University

• Wu Yung-chun

  Department Of Engineering And System Science National Tsing Hua University

関連論文

• High-k materials and poly-Si nanowires in nonvolatile memory for 3D flash memory and display panel applications(Session 8A : Memory 2)
• High-k materials and poly-Si nanowires in nonvolatile memory for 3D flash memory and display panel applications(Session 8A : Memory 2)
• Polycrystalline Silicon Thin-Film Flash Memory with Pi-Gate Structure and HfO2 Charge Trapping Layer
• Optimization of Amorphous Si/Crystalline Si Heterojunction Solar Cells by BF2 Ion Implantation
• Enhancement of Two-Bit Performance of Dual-Pi-Gate Charge Trapping Layer Flash Memory

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