Optimization of Amorphous Si/Crystalline Si Heterojunction Solar Cells by BF2 Ion Implantation

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概要

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• In this study we evaluated two approaches to improving the efficiency of amorphous Si/crystalline Si (a-Si/c-Si) heterojunction solar cells by BF2 ion implantation. First, emitter layer formation was compared for the cases of B and BF2 ion implantation when using the same 7° tilt angle. Second, emitter layer formation was compared between a 7° tilt angle and a 60° tilt angle when using BF2 ion implantation. The experimental results reveal that the fluorine in BF2 passivates the defects at the a-Si and a-Si/c-Si interface, and ion implantation at a high 60° tilt angle forms a shallow solar cell junction. The emitter layer formed by BF2 ion implantation with a 60° tilt angle in an a-Si/c-Si heterojunction solar cell achieves the highest short circuit current density (J_{\text{SC}}) of 36.85 mA/cm2 with a conversion efficiency (\eta) of 14.41%.

• 2012-04-25

著者

• Chen Chun-hao

  Department Of Applied Chemistry And Chemical Engineering Faculty Of Engineering Kagoshima University

• Wu Yung-chun

  Department Of Engineering And System Science National Tsing Hua University

• Chen Chun-Hao

  Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300, Taiwan

• Yang Shih-Sian

  Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300, Taiwan

• Tsai Tzong-Han

  Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300, Taiwan

• Wu Yung-Chun

  Department of Engineering and System Science, National Tsing Hua University, Hsinchu 300, Taiwan

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