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Department of Electrophysics, National Chiao Tung University | 論文
- Direct Observation of the Molecular Structural Changes during the Claisen Rearrangement Including the Transition State
- Why is Indigo Photostable over Extremely Long Periods?
- Transition State in a Prevented Proton Transfer Observed in Real Time
- Current Properties of GaN V-Defect Using Conductive Atomic Force Microscopy
- Photoluminescence Studies of In-Doped GaN:Mg Films
- Influence of Temperature on the Ontogenetic Expression of Neural Development-Related Genes from Developing Tilapia Brain Expressed Sequence Tags
- Thermal Stability of Plasma-Treated Ohmic Contacts to n-GaN
- Inductively Coupled Plasma Reactive Ion Etching-Induced GaN Defect Studied by Schottky Current Transport Analysis
- Enhancement of Light Output Power of InGaN/GaN Multiple Quantum Well Light-Emitting Diodes by Titanium Dioxide Texturing
- Field-Induced Junction in InSb Gate-Controlled Diodes
- Influence of Sapphire Nitridation on Properties of Indium Nitride Prepared by Metalorganic Vapor Phase Epitaxy
- Raman and X-Ray Studies of InN Films Grown at Different Temperatures by Metalorganic Vapor Phase Epitaxy
- Effect of Sn on the Superconductivity of the DyBa2Cu3O7-δ System
- Growth Temperature Reduction for Isoelectronic As-Doped GaN