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Department of Electrophysics, National Chiao Tung University | 論文
- Growth and X-ray Characterization of an InN Film on Sapphire Prepared by Metalorganic Vapor Phase Epitaxy
- Crystalline Structure Changes in GaN Films Grown at Different Temperatures
- Deep Electron Trapping Centers in Te-doped (Al_x Ga_)_ In_ P (x=0.5) Layers Grown by Metal-Organic Chemical Vapor Deposition(Semiconductors)
- Thermal-Treatment Induced Deep Electron Traps In AlInP : Semiconductors
- Andreev Scattering in Semiconductor-Superconductor Junctions Containing a Finite Width Semiconductor Region Applied by Magnetic Fields (Condensed Matter : Electronic Structure, Electrical, Magnetic and Optical Properties)
- Properties of Highly Resistive and Nonstoichiometric GaAs Film Grown by Low-temperature Metalorganic Chemical Vapor Deposition Using Tertiarybutylarsine
- Local Strained Channel nMOSFETs by Different Poly-Si Gate and SiN Capping Layer Thicknesses : Mobility, Simulation, Size Dependence, and Hot Carrier Stress
- Electrical Properties of the Free-Standing Diamond Film at High Voltages
- Characteristics of Photogenerated Bipolar Terahertz Radiation in Biased Photoconductive Switches : Optical Properties of Condensed Matter
- Characteristics of Yba_2Cu_3O_7 Thin Films Deposited on Substrates Buffered by Various TiO_2 Layers : Superconductors
- Critical Current Densities of Submillimeter Single-Grain Tl-2223 Superconducting Thin Film
- Growth of ZnSe Epilayer on Si Using Ge/Ge_xSi_ Buffer Structure
- Phosphorus Vacancy as a Deep Level in AlInP Layers
- A Dopant-Related Defect in Te-Doped AlInP
- Mg-related Deep Levels in AlInP
- Analysis of Average Transport Critical Current Density of Oxide Superconductors Deposited on a Silver Base
- Fabrication of Terahertz Planar Metamaterials Using a Super-Fine Ink-Jet Printer
- Effects of High-Resistivity, Low-Temperature Layer in Transient Capacitance Measurements of GaAs n-i-p Structures
- Temperature Dependence of Azimuthal Anchoring Strength of Liquid Crystals on Microgrooved Glass Substrate
- Effects of Thermal Annealing on Ni/Ta/n-GaN Schottky Diodes : Semiconductors