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Department of Electronics, Faculty of Engineering, Tottori University | 論文
- Effects of He Gas Addition on the Production of Active Particles in rf Magnetron Sputtering
- Optimization of Contact Process with Monte Carlo Study for Advanced CMOS Devices
- Optimization of Contact Process with Monte-Carlo Study for Advanced CMOS Devices
- Preparation of As-Deposited 80 K-Phase Bi-Sr-Ca-Cu-O Films by RF Mgnetron Sputtering
- Synthesis of Novel 2-Substituted-1,3,4-thiadiazoles
- Effect of Bi_2Sr_2CaCu_2O_y Single Crystal Surfaces on Contact Resistance
- Observation of Josephson Junctionlike Behavior in Single-Crystal (Bi, Pb)_2Sr_2CaCu_2O_y
- Theoretical Analysis of Amorphous-Silicon Field-Effect-Transistors
- Threshold Energy of Atomic Displacement in CdTe
- Effects of Uniaxial Stress on the CdS Single Crystals
- Short-Term Prediction of Oil Temperature Change of Outdoor Transformer by Self-Organizing Map(SOM) (論文特集 自己組織化マップとその応用)
- SOM an approach to Data Mining of Power Transformer Database
- Complications Following Percutaneous Endoscopic Gastrostomy : Acute Respiratory Infection and Local Skin Infection
- Thin Film Growth of Ag on KCI Studied by LEED-AES Experiments
- Expression of HGF/c-Met Gene and Protein in Odontogenic Tumors.
- Typical Electron Beam Doping(Superdiffusion)of Impurity Atoms in Damage-Free Regions of Semiconductors by the Kick-Out Mechanism
- Dependence of the Photoacoustic Signal Intensity Spectra on Sintering Temperature for Ceramic CdS and CdS_gSe_
- Changes in Electrical Resistance and Auger Electron Appearance Potential Spectra of Titanium Thin Films by Oxygen Diffusion
- Electron Beam Doping (Superdiffusion) in Damage-Free Regions of Semiconductors by the Kick-Out Mechanism (Secondary-Ion Mass Spectrometer and Photoluminescence Measurements)
- Electron Beam Doping in Damageless Regions of Semiconductors by the Kick-Out Mechanism (Interstitialcy and Direct Interstitial Mechanism)