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Department of Electronic Engineering, Faculty of Engineering, University of Tokyo | 論文
- Electrical and Optical Properties of ZnS:Sb, Te Grown from Sb_Te_ Solution
- Photoluminescence in ZnSe:Te Prepared by Solution Growth
- Photoluminescence in Sb-Doped ZnS
- Resonant Raman Scattering in ZnS
- Liquid-Phase Epitaxial Growth of ZnSe Using Sb_Se_ as Solvent
- Nb/AlO_x/Nb Josephson Tunnel Junctions Using Electron Beam Evaporation : Electrical Properties of Condensed Matter
- Y-Ba-Cu-O/AlO_x/Nb Josephson Tunnel Junctions
- Arsenic Pressure Dependence of the Surface Diffusion in Molecular Beam Epitaxy on (111)B-(001) Mesa-Etched GaAs Substrates Studied by In Situ Scanning Microprobe Reflection High-Energy Electron Diffraction
- Sheet Resistivity of the Epitaxially Grown Germanium Layer
- Thermodynamics of Vapor Growth of ZnSe-Ge-I_2 System in Closed Tube Process
- Three-dimensional Calculation of Residual Stress in InP Layers Grown by Microchannel Epitaxy on Si Substrates
- LPE Lateral Overgrowth of GaP
- Mechanism of Yellow Luminescence in GaN
- Design of High-Speed High-Density Parallel Adders and Multipliers Using Regenerative Pass-Transistor Logic
- Deep Ultraviolet Lithography Masks Using Amorphous Silicon Films
- Superconductive Controlled Weak-Links
- Epitaxial Growth of SiC Film on Silicon Substrate and Its Crystal Structure
- Effect of Photon Recycling on Diffusion Length and Internal Quantum Efficiency in Al_xGa_As-GaAs Heterostructures
- Electrical Properties of n-CdS Grown from Tellurium Solution
- Opening Address