スポンサーリンク
Department of Electrical and Computer Engineering, Nagoya Institute of Technology | 論文
- Control of Surface Recombination of Si Wafers by an External Electrode
- EPR Study of Monoclinic Centres in CsCdF_3 and CsCaF_3 Co-Doped with Gd^ and Na^+ Ions
- EPR Study of Tetragonal and Orthorhombic Fe^ Centres in Rb_2CdF_4 Crystals
- Evidence of Structural Phase Transition in K_2CdF_4 Derived from EPR Measurements for Cr^ Centres
- Host Lattice Effects in the EPR Spectra of Cr^-Li^+ and Cr^-V_ Centres in A_2MgF_4 (A=K,Rb) Crystals
- Electron Paramagnetic Resonance of Gd^ Centres in Rb_2CdF_4 and Cs_2CdF_4 Crystals
- EPR Study of Fe^-V_and Fe^-Li^+Centres in RbCdF_3 and CsCdF_3 Crystals
- EPR Study of Cr^Centres in Rb_ZnF_ Rb_2CdF_4 and Cs_2CdF_4 Crstals
- EPR Study of Gd^-V_m and Gd^-Li^+ Centres in Several Perovskite Fluorides
- Annealing Temperature Effects on Synthesis of n-TiO_2/dye/p-CuI Solid-State Solar Cells
- The physical and micro structural properties of PECVD grown amorphous carbon films on the contribution to n-C:P/p-Si solar cells
- The Deposition of a-C : H Films by Pulsed Laser Ablation
- Effect of Growth Temperature on InGaAsP/GaAsP Expitaxial Growth
- Crosshatch Pattern on InGaAsP Layers Grown on GaAs_P_ Substrate by LPE
- Meltback of GaAs_P_ Substrate in LPE Growth of InGaAsP
- LPE Growth of In_ Ga_xAs_P_y on GaAs_P_
- Room Temperature Operation of Visible (λ=658.6 nm) InGaAsP DH Laser Diodes on GaAsP
- Visible InGaP / GaAsP Dual Wavelength Light Emitting Diodes
- New Wavelength-Demultiplexing InGaAsP/InP Photodiodes : III-4: III-V COMPOUND SOLAR CELLS AND DETECTORS
- Measurement of Diffusion Coefficient and Surface Recombination Velocity for p-InGaAsP Grown on InP