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Department of Electrical Engineering and Computer Science, Seoul National University, 599 Gwanak-ro, Gwanak-gu, Seoul 151-744, Korea | 論文
- Self-Aligned Offset-gated Poly-Si TFTs with Symmetric Source/Drain Characteristics
- Effects of Hydrogenation Treatment with Various Multi-channel Poly-Si TFT
- Device Characteristics of Polycrystalline Si_Ge_ Thin Film Transistors Grown from Si_2H_6 and GeH_4 Source Gases
- Hydrogen Passivation on the Grain Boundary and Intragranular Defects in Various Polysilicon Thin-Film Taransistors
- Hydrogen Passivation on the Grain Boundary and Intragranular Defects in Various Polysilicon Thin Film Transistors
- Structural Dimension Effects of Plasma Hydrogenation on Low-Temperature Poly-Si Thin Film Transistors
- Low-Loss Schottky Rectifier Utilizing Trench Sidewall as Junction-Barrier-Controlled Schottky Contact
- A Trench-Gate Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor with the p^+ Cathode Well
- Separated Drift Field Magmetotransistor with a p^+ Ring around an Emitter
- Effect of Channel Layer Thickness on Characteristics and Stability of Amorphous Hafnium--Indium--Zinc Oxide Thin Film Transistors
- Effect of TiO2 Antireflection Layer with Various Conductivities and Refractive Indices on Performance of Amorphous Silicon/Amorphous Silicon Germanium Tandem Solar Cells
- Effect of Channel Length on the Reliability of Amorphous Indium--Gallium--Zinc Oxide Thin Film Transistors
- Electrical Characteristics of Polycrystalline Silicon Thin Film Transistors to Improve an ON/OFF Current Ratio