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Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University | 論文
- Selective Area Growth of GaN on Si Substrate Using SiO_2 Mask by Metalorganic Vapor Phase Epitaxy
- Transmission Electron Microscopy Study of the Microstructure in Selective-Area-Grown GaN and an AIGaN/GaN Heterostructure on a 7-Degree Off-Oriented (001) Si Substrate : Structure and Machanical and Thermal Properties of Condensed Matter
- Scintigraphic Detection of Regional Disruption of the Adrenergic Nervous System in Sarcoid Heart disease
- Experimental Observation of Intersubband Excitations in Si-Doped GaAs/AlAs Multiple Quantum Wells
- Novel Method of Modulation Spectroscopy for Heterostructures: Electro-Photoreflectance
- Mixing/Resonance of Electronic States and Optical Nonlinearity in a GaAs/AlGaAs Asymmetric Triple Quantum Well Structure
- Optical and Crystalline Properties of Epitaxial-Lateral-Overgrown-GaN Using Tungsten Mask by Hydride Vapor Phase Epitaxy
- Wannier-Stark Localization in Superlattices
- Raman Scattering Study of InGaN Grown by Metalorganic Vapor Phase Epitaxy on (0001) Sapphire Substrates : Optical Properties of Condensed Matter
- Selective Area Growth of GaN Using Tungsten Mask by Metalorganic Vapor Phase Epitaxy
- Erratum: ``Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates''
- Drastic Reduction of Dislocation Density in Semipolar ($11\bar{2}2$) GaN Stripe Crystal on Si Substrate by Dual Selective Metal--Organic Vapor Phase Epitaxy
- Computer Simulation of Tunneling Transfer and Formation of Resonant States in a GaAs/AlGaAs 2 Dimensional Electron Gas Disk
- Reduction of Efficiency Droop in Semipolar $(1\bar{1}01)$ InGaN/GaN Light Emitting Diodes Grown on Patterned Silicon Substrates
- Electron-beam-induced-current investigation of GaN/AlGaN/Si heterostructures using scanning transmission electron microscopy
- Application of electron holography to the determination of contact potential difference in an AlGaN/AlN/Si heterostructure
- Series Resistance in n-GaN/AlN/n-Si Heterojunction Structure
- AlGaN-Based Deep Ultraviolet Light-Emitting Diodes Fabricated on Patterned Sapphire Substrates
- Inactivation of Penicillium digitatum Spores by a High-Density Ground-State Atomic Oxygen-Radical Source Employing an Atmospheric-Pressure Plasma
- Power Supply Overlaid Communication with Common Clock Delivery for Cooperative Motion Control