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Department of Electrical Engineering Hiroshima University | 論文
- Preparation and Crystallization Process of High-T_c Superconducting Bi, Pb-Sr-Ca-Cu-O Film (T_c=101 K) by Melt-Quenching and Annealing Techniques
- Characteristics of Very High-Aspect-Ratio Contact Hole Etching
- Spatial Distribution and Its Phase Transition of Densely Contact-Electrified Electrons on a Thin Silicon Oxide
- Stable-Unstable Phase Transition of Densely Contract-Electrified Electrons on Thin Silicon Oxide
- Photoexcited Anisotropic Etching of Single-Crystalline Silicon
- n-Channel Organic Thin-Film Transistors based on Naphthalene--Bis(dicarboximide) Polymer for Organic Transistor Memory Using Hole-Acceptor Layer
- High-Rate Bias Sputtering Filling of SiO2 Film Employing Both Continuous Wave and Time-Modulated Inductively Coupled Plasmas
- An Experimental Study on the Ordered Alloy Ni_2Cr
- Ion Beam Analysis of ZnSe
- Implanted Antimony Precipitation in Silicon Studied by Medium-Energy Ion Scattering
- Effectiveness of L2 spinal nerve infiltration for selective discogenic low back pain patients
- Miniaturized Capillary Electrophoresis Fabricated on Pyrex Glass Chips Using Deep Dry Etching and Anodic Bonding
- Study on Adsorption Behavior of Organic Contaminations on Silicon Surface by Gas Chromatography/Mass Spectrometry
- Magnetic Domain Expansion Phenomena in a Double Mask Type Magnetically Induced Super Resolution Magneto-Optical Disk
- Change in Modic Type 1 and 2 Signals After Posterolateral Fusion Surgery
- Percutaneous Cholelithotomy : A Preliminary Report : A New Treatment Technique for Cholelithiasis
- Barrier Height of InP Schottky Diodes Prepared by Means of UV Oxidation
- Formation of Cubic Boron Nitride Films on Diamond by Plasma CVD Technique
- Early Stage of Silicon Oxidation Studied by in situ X-Ray Photoelectron Spectroscopy : Materials and Device Structures with Atomic Scale Resolution(Solid State Devices and Materials 1)
- Structural Changes of Amorphous Ge_Sn_x Alloy Films by Annealing