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Department of Biochemical Engineering and Science Kyushu Institute of Technology | 論文
- Mutation analysis of the interaction of B-type cytochrome c oxidase with its natural substrate cytochrome c-551(ENZYMOLOGY, PROTEIN ENGINEERING, AND ENZYME TECHNOLOGY)
- Cultivation characteristics and gene expression profiles of Aspergillus oryzae by membrane-surface liquid culture, shaking-flask culture, and agar-plate culture(BIOCHEMICAL ENGINEERING)
- The cytochrome bcc-aa3-type respiratory chain of Rhodococcus rhodochrous
- MOCVD法によるPr酸化膜の作製およびその電気的特性評価(ゲート絶縁膜形成およびメモリ技術,ゲート絶縁膜,容量膜,機能膜及びメモリ技術)
- Development of a highly efficient indigo dyeing method using indican with an immobilized β-glucosidase from Aspergillus niger(ENZYMOLOGY, PROTEIN ENGINEERING, AND ENZYME TECHNOLOGY)
- ECA (Electrochemical array) チップを用いたRAS変異解析(第105回日本外科学会定期学術集会)
- Pr(EtCp)_3を用いた原子層堆積法によるPr酸化膜の形成(レギュラーセッション,ゲート絶縁薄膜,容量膜,機能膜及びメモリ技術)
- MN-P23 Development of peptide immobilization method using PS-tagged cushion protein(Section X Micro/Nano Technology for Analysis and Cell Manipulation)
- Adsorption Characteristics of Oligopeptides Composed of Acidic and Basic Amino Acids on Titanium Surface(BIOCHEMICAL ENGINEERING)
- Identification of Genes from Aspergillus oryzae That Are Preferentially Expressed in Membrane-Surface Liquid Culture(GENETICS, MOLECULAR BIOLOGY, AND GENE ENGINEERING)
- Protease Susceptibility of β-Lactoglobulin Adsorbed on Stainless Steel Surface as Evidence of Contribution of Its Specific Segment to Adsorption(MISCELLANEOUS)
- Purification and Characterization of a Novel Aminoacylase from Streptomyces mobaraensis
- Conductive Atomic Force Microscopy Analysis for Local Electrical Characteristics in Stressed SiO_2 Gate Films
- Pr-Oxide-Based Dielectric Films on Ge Substrates
- Conductance Oscillations in Hopping Conduction Systems Fabricated by Focused Ion Beam Implantation ( Quantum Dot Structures)
- Nanoscale Observations for Degradation Phenomena in SiO_2 and High-k Gate Insulators Using Conductive-Atomic Force Microscopy
- Surface Treatment of Ge(001) Surface by Radical Nitridation
- Crystalline and electrical properties of mictamict TiSiN gate MOS capacitors
- Composition Dependence of Work Function in Metal (Ni, Pt)-Germanide Gate Electrodes
- 電子注入ストレスを加えたゲート酸化膜の電流検出型原子間力顕微鏡による解析(電子材料)
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