スポンサーリンク
Department of Applied Science for Integrated System Engineering, Graduate School of Engineering, Kyushu Institute of Technology | 論文
- The Extensive Burns Treatment in China
- プロセス・モデリングと高信頼性システム
- プロセス・モデリングと高信頼性システム
- Variation of Photoluminescence Properties of Stain-Etched Si with Crystallinity of Starting Polycrystalline Si Films
- Effects of Light Exposure during Anodization on Photoluminescence of Porous Si
- Void free at Interface of the SiC Film and Si Substrate
- Conversion of Si(100) to Si_Ge_xC_y Alloy by Hydrogen Plasma Containing Ge and C Species
- Growth of 3C-SiC on Si Substrate with Ge_C_ Buffer Layer : Semiconductors
- Influence of Oxygen on Formation of Hollow Voids at SiC/Si Interface : Semiconductors
- Fabrication of Nanoscale Cubic SiC Particle Film
- Compositional Changes of SiC/Si Structure during Vacuum Annealing
- Activation Energy of Nanoscale 3C-SiC Island Growth on Si Substrate
- Influence of SiC Cover Layer of Si Substrate on Properties of Cubic SiC Films Prepared by Hydrogen Plasma Sputtering
- Infrared Absorption Properties of Nanocrystalline Cubic SiC Films
- Behaviors of Carbon at Initial Stages of SiC Film Grown on Thermally Oxidized Si Substrate
- Observation of the Formation Processes of Hollow Voids at the Interface between SiC Film and Si Substrate
- Low-Temperature Growth of Oriented Silicon Carbide on Silicon by Reactive Hydrogen Plasma Sputtering Technique
- Study of Hydrogen Ion Bombardment Effect on the Growth of Si:H Films Prepared by Hydrogen Plasma Sputtering of Silicon
- Study of the Growth Mechanism of Nanocrystalline Si:H Films Prepared by Reactive Hydrogen Plasma Sputtering of Silicon
- Temperature-Dependent Reaction of rf Hydrogen Plasma with Silicon