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Department Of Physics Kurume University | 論文
- Measurement and Analysis of the Atomic Velocity Distribution and the Second-Order Doppler Shift of the Cesium Beam Frequency Standard, NRLM-II
- Electrical Properties of p- and n-GaSe Doped with As and Ge
- Radiative Centers in Layer Semiconductor p-GaSe Doped with Mn
- Photoluminescence Spectra of n-GaSe Layered Semiconductor Doped with Sn
- Near Band Edge Photoacoustic Spectra of p-Si Single Crystals
- Impurity Levels in Layered Semiconductor GaS Doped with Cu
- Surface Acoustic Waves in High-T_c Superconducting Thin Films on Piezoelectric PbTiO_3 Films
- Frequency Limitation of Phonon Hole Burning in Piezoelectric Powders
- Phonon Hole Burning Created by Pulsed RF Electric Field in Impedance Spectrum
- Temperature Dependence of Electrical Properties in Si-Implanted Semi-Insulating GaAs
- Temperature Dependence of Photoluminescence in Layered Semiconductor n-GaS Doped with Sn
- Effect of Annealing on Electrical and Optical Properties of Si-Implanted GaAs
- Crystalline InSe Films Prepared by RF-Sputtering Technique
- Photoluminescence Studies of Layered Semiconductor GaS Doped with Ge
- Annealing Behavior of Deep Trap Level in p-GaTe
- Optical and Electrical Characteristics of Layered Semiconductor p-InSe Doped with Sb