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Department Of Materials Science And Engineering North Carolina State University | 論文
- Nanostructuring of TiNi Alloy by SPD Processing for Advanced Properties
- B2-CoZr規則合金のメカニカルミリングによるアモルファス化の微視的メカニズム
- Defect Formation during Hetero-Epitaxial Growth of Aluminum Nitride Thin Films on 6H-Silicon Carbide by Gas-Source Molecular Beam Epitaxy
- Medium Field Breakdown Origin on Metal Oxide Semiconductor Capacitor Containing Grown-in Czochralski Silicon Crystal Defects
- Medium Field Breakdown Following Local Tunneling Current on MOS Capacitor Containing Grown-in CZ Crystal Defects
- Growth of GaAs on High Temperature Hydrogen Pretreated (100) Si Substrates by Molecular Beam Epitaxy : Semiconductors and Semiconductor Devices
- Monolayer Nitrogen-Atom Distributions in Ultrathin Gate Dielectrics by Low-Temperature Low-Thermal-Budget Processing
- Low-Thermal-Budget Process-Controlled Monolayer Level Incorporation of Nitrogen into Ultra-Thin Gate Dielectric Structures : Applications to MOS Devices
- Integration of Plasma-Assisted and Rapid Thermal Processing for Low-Thermal Budget Preparation of Ultra-Thin Dielectrics for Stacked-Gate Device Structures
- Ferroelectric and Colossal Magnetoresistive Properties of a PbZr_Ti_xO_3/La_Sr_xMnO_3 Heterostructure Film
- Pigment dynamics and autumn leaf senescence in a New England deciduous forest, eastern USA
- Chondrocyte Deformation and Mechanotransduction in Cartilage Model Systems(International Workshop 2)
- Multimodality functional imaging evaluation in a patient with Rasmussen's encephalitis
- メカニカルアロイングによって作成したNb3Snアモルファス合金の短範囲構造
- Functional association of CD7 with phosphatidylinositol 3-kinase: interaction via a YEDM motif
- Investigation on Defects in Czochralski Silicon with High-Sensitive Laser/Microwave Photoconductance Technique
- A Comparison of SiO_2-Based Alloys as High Permittivity Gate Oxides
- Optical Emission during Layered Growth of PrBa_2Cu_3O_/YBa_2Cu_3O_ High T_c Superconducting Thin Film by Pulsed Laser Evaporation
- Mechanism of Ultraviolet Irradiation Effect on Si-SiO_2 Interface in Silicon Wafers
- Noncontact Characterization for Carrier Recombination Center Related to Si-SiO_2 Interface