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Department Of Electrophysics National Chiao-tung University | 論文
- Thermally Activated Diffusion Observed by In situ Reflection High Energy Electron Diffraction Intensity Monitoring on Interrupted SrTiO_3 Homoepitaxial Growth
- Effects of Growth Temperature on Solid Incorporation of AlAs_Sb_x Using Tertiarybutylarsine as Arsenic Source Precursor
- Computerized Epiphysis Analysis Using Gabor Filter with Neural Network
- A Simple Experiment of Simulating Optical Bistability with an Oscilloscope and Photodiodes
- Fabrication and Characterization of IrO_2-Based Microsensors for Fast Detection of Carbon Dioxide
- Fabrication of YBCO 6-pole microstrip hairpin-type filters at 8.25 GHz
- Electrical Characteristics of CO_2-Sensitive Diode Based on WO_3 and IrO_2 for Microsensor Applications
- Electrical Characteristics of Glucose-Sensitive Diode Arrays Based on WO3 and IrO2 for Microsensor Applications
- Electrical Characteristics of WO_3-Based CO_2-Sensitive Solid-State Microsensor
- Calculation of Zero-Norm States and Reduction of Stringy Scattering Amplitudes(Particles and Fields)
- One-Loop Massive Scattering Amplitudes and Ward Identities in String Theory(Particles and Fields)
- Transition State in a Prevented Proton Transfer Observed in Real Time
- Simplified radius, ulna, and short bone-age assessment procedure using grouped-Tanner-Whitehouse method
- Thermally Activated Diffusion Observed by In situ Reflection High Energy Electron Diffraction Intensity Monitoring on Interrupted SrTiO3 Homoepitaxial Growth
- ADRENOCEPTORS IN THE GUINEA PIG'S GALLBLADDER
- Sol–Gel-Derived Zn(1-x)MgxO Thin Films Used as Active Channel Layer of Thin-Film Transistors
- Activated Kinetics of Room-Temperature-Deposited SrTiO3 Thin Films Investigated by Reflection-High-Energy-Electron-Diffraction-Monitored Annealing at Different Heating Rates
- Influence of Sapphire Nitridation on Properties of Indium Nitride Prepared by Metalorganic Vapor Phase Epitaxy
- Raman and X-Ray Studies of InN Films Grown at Different Temperatures by Metalorganic Vapor Phase Epitaxy
- Growth Temperature Reduction for Isoelectronic As-Doped GaN