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Department Of Electronics Faculty Of Engineering Tokai University | 論文
- Optical Constants of a-Si_xC_:H Alloy Films Deposited by Tetrode RF Sputtering
- Hall Effect Measurements of Surface Conductive Layer on Undoped Diamond Films in NO_2 and NH_3 Atmospheres
- Collision Detection VLSI Processor for Intelligent Vehicles Using a Hierarchically-Content-Addressable Memory (Special Issue on Integrated Electronics and New System Paradigms)
- Some Properties of Schottky Barrier Formed on Chalcogenide Amorphous Semiconductor
- Detection of Stable Radicals in Malignant Ascites and Pleural Effusion by Electron Spin Resonance
- Junction Properties of Polycrystalline Diamond / Hydrogenated Amorphous Silicon p-n Heterojunctions
- Polycrystalline Diamond/Hydrogenated Amorphous Silicon P-N Heterojunction
- Total knee arthroplasty for gonarthrosis with patellar dislocation
- Fabrication of Nitrogen-Doped Diamond Field Emitter Utilizing Porous Silicon and Molding Technique
- Preparation and Characterization of Epitaxial BaTiO_3 Thin Films by Low Frequency Sputtering
- The Crystallinity of Diamond Thin Films Fabricated with Water Mixed Carbon Solution
- Fabrication of Solid-State Triode Devices by Use of Diamond Thin Films
- Backward-Diode Characteristics of p-Type Diamond / n-Type Silicon Heterojunction Device
- Formation Mechanism of Surface Conductive Layer on Diamond Films : Comparison between Polycrystalline and Homoepitaxial Films
- Forward Characteristics of p-Type Diamond / n-Type Silicon Heterojunction Diodes
- Anomalous Photoinduced Change in Threshold Voltage of Current-Controlled Negative Resistance in Si p-i-n Diodes Doped with Gold
- "Backward Diode" Characteristics of p-Type Diamond/n-Type Silicon Heterojunction Diodes
- An Anomalous Change in Threshold Voltage of Photoilluminated Si p-i-n Diode Doped with Au
- A Simulation of Transient Negative Photoconduetivity in Silicon Doped with Gold
- Observation of Transient Negative Electroconductivity Characteristics in Silicon Doped with Gold