スポンサーリンク
Department Of Electronics Faculty Of Engineering Kyoto University | 論文
- Cloning of a Gene Coding for Rhodotorucin A, a Farnesyl Peptide Mating Pheromone of Rhodosporidium toruloides(Biological Chemistry)
- Measurement of Internal Magnetic Field Distribution in Axially Magnetized YIG Rods Based on Magnetoelastic Resonance Absorption
- Thermal Oxidation of SiC and Electrical Properties of Al-SiO_2-SiC MOS Structure
- PJ-219 DNA Microarray Analysis of Protective Effect in Heart by Benidipine Hydrochloride in Cardiac Hypertrophy Accompanied with Hypertension(Hypertension, basic-3 (H) PJ37,Poster Session (Japanese),The 70th Anniversary Annual Scientific Meeting of the Ja
- Growth and Properties of PbTiO_3 Thin Films by Photoenhanced Chemical Vapor Deposition : Thin Films
- The Control of Luminous Color of the Discharge Lamps
- Enhancement of the Sum and Difference Frequencies in Shubnikov-de Haas Oscillation at Yamaji Angle in the Layered Perovskite Sr_2RuO_4
- Crystal Growth of LiNbO_3:Fe and Its Photorefractive Properties : Ferroelectrics
- The Relation between Acoustoelectric Non-Ohmic Conduction and Carrier Concentration in Tellurium at 77 K
- Electrical Properties of Piezoelectric Transducers with Space-Periodic Charge Distribution and Control of Properties
- Chemical Vapor Deposition of Single-Crystalline ZnO Film with Smooth Surface on Intermediately Sputtered ZnO Thin Film on Sapphire
- VHF/UHF Composite Resonator on a Silicon Substrate : Generation and Detection of Ultrasonics
- Low-Temperature Growth of Piezoelectric AlN Film and its Optical and Acoustical Properties : Acoustics Materials
- Ultrasonic Amplification in Tellurium
- Current Oscillation in Tellurium at High Electric Field
- Temperature Dependence of Nonlinear V-I Characteristic in Tellurium
- Spontaneous Trasition between Relaxor and Ferroelectric States in Lanthanum-Modified Lead Zirconate Titanate (6-7)/65/35
- New Blue Photoluminescence of Ga-Doped 4H-SiC Grown from Si Melt
- Photoluminescence of 4H-SiC Single Crystals Grown from Si Melt
- Photon Assisted Tunneling in SiC LED's Prepared by Overcompensation Method