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Department Of Electronic Engineering National Yunlin University Of Science And Technology | 論文
- Use of Photonic Quantum Well as Tunable Defect in Multilayer Narrowband Reflection-and-Transmission Filter
- Reduced-Complexity RBF-Assisted TEQ Using Extended FCM Algorithm for Dispersive Rayleigh-Fading Channels
- A Low-Complexity and High-Performance 2D Look-Up Table for LDPC Hardware Implementation
- Growth of Highly Strained InGaAs Quantum Wells by Metalorganic Chemical Vapor Deposition with Application to Vertical-Cavity Surface-Emitting Laser
- Local Strained Channel nMOSFETs by Different Poly-Si Gate and SiN Capping Layer Thicknesses : Mobility, Simulation, Size Dependence, and Hot Carrier Stress
- Effects of Thermal Annealing on Ni/Ta/n-GaN Schottky Diodes : Semiconductors
- Homoepitaxial ZnSe MIS Photodetectors Using SiO_2 and BST Insulator
- Impacts of Cu/TaN Electrode on the Electrical Properties of Metal-insulator-metal (Ba,Sr)TiO_3 Thin-film Capacitors
- Study on All-Solid-State Chloride Sensor Based on Tin Oxide/Indium Tin Oxide Glass
- Substrate Parasitic Current in InGaP/GaAs HBTs
- Two-Stage Optimization of Lens Grinding Parameters for Multi-Quality Target Combining Taguchi Method and Neural Network Software
- Characterization of Ultrathin Dielectrics Grown by Microwave Afterglow Oxygen and N_2O Plasma
- SnO_2 Separative Structure Extended Gate H^+-Ion Sensitive Field Effect Transistor by the Sol-Gel Technology and the Readout Circuit Developed by Source Follower
- Bounds of automorphism groups of genus 2 fibrations
- Best bounds of automorphism groups of hyperelliptic fibrations
- The Synthesis of Large Area Polycrystalline Diamond Films Using Microwave Plasma Chemical Vapor Deposition System
- Substrate Leakage Current in InGaP/GaAs Heterojunction Bipolar Transistors
- Drift and Hysteresis Effects on AlN/SiO2 Gate pH Ion-Sensitive Field-Effect Transistor
- InGaN/GaN Light-Emitting Diodes with Rapidly Thermal-Annealed Ni/ITO p-Contacts
- InGaN/GaN Multi-Quantum Well Metal-Insulator Semiconductor Photodetectors with Photo-CVD SiO2 Layers